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| BAV19WS thru BAV21WS New Product Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes SOD-323 .012 (0.3) Cathode Band .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Mounting Pad Layout 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) Dimensions in inches Topand (millimeters) View .059 (1.5) .004 (0.1) max. .043 (1.1) .049 (1.25) max. .010 (0.25) min. .006 (0.15) max. Mechanical Data Case: SOD-323 Plastic Case Weight: approx. 0.004g Marking BAV19WS = A8 Code: BAV20WS = A9 BAV21WS = AA Packaging Codes/Options: D5/10K per 13" reel (8mm tape), 30K/box D6/3K per 7" reel (8mm tape), 30K/box Features * Silicon Epitaxial Planar Diodes * For general purpose * These diodes are also available in other case styles including: the DO-35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT-23 case with the type designation BAS19 - BAS21 and the SOD-123 case with the type designation BAV19W - BAV21W (TA = 25C unless otherwise noted) Maximum Ratings and Thermal Characteristics Parameter Continuous Reverse Voltage BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS Symbol VR Value 100 150 200 120 200 250 250(1) 200(1) 625(1) 1 200(1) 650(1) 150 (1) (1) Unit V Repetitive Peak Reverse Voltage VRRM IF IF(AV) IFRM IFSM Ptot RJA Tj TS V mA mA mA A mW C/W C C Forward DC Current at Tamb = 25C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25C and f 50Hz Repetitive Peak Forward Current at f 50Hz, = 180, Tamb = 25C Surge Forward Current at t < 1s, Tj = 25C Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Note: (1) Valid provided that leads are kept at ambient temperature. -65 to +175 Document Number 88151 14-May-02 www.vishay.com 1 BAV19WS thru BAV21WS Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Forward Voltage BAV19WS BAV19WS BAV20WS BAV20WS BAV21WS BAV21WS Symbol VF Test Condition IF = 100 mA IF = 200 mA VR = 100V VR = 100V, Tj = 100 C VR = 150V VR = 150V, Tj = 100 C VR = 200V VR = 200V, Tj = 100 C IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA Irr = 3 mA, RL = 100 Min -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 5 -- -- Max 1.00 1.25 100 15 100 15 100 15 -- 1.5 50 Unit V nA A nA A nA A pF ns Leakage Current IR Dynamic Forward Resistance Capacitance Reverse Recovery Time rf Ctot trr Ratings and Characteristic Curves (TA = 25C unless otherwise noted) www.vishay.com 2 Document Number 88151 14-May-02 BAV19WS thru BAV21WS Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88151 14-May-02 www.vishay.com 3 |
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